Show Hamamatsu Avalanche Photo Diode 2503027791
This is all the information about APD 2503027791. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2503027791 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2503027791/2307024754 |
| Unit: |
#1064 (barcode 1309011513) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
H10 |
| Break-through voltage: |
410 V |
| Voltage for Gain 100 (T=+25°C): |
384 V |
| Dark current: |
3.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
174 |
| Position in Box: |
19 |
| EP1 batch: |
14 |
| EP1 batch after irradiation: |
10097 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
19. Feb 2019 |
| Sent for analysis after irradiation: |
01. Apr 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
27. Mar 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
27. Mar 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 383.4868658 V T = -25 °C: 348.0813786 V |
| Voltage for Gain 150: |
T = +20 °C: 391.3554362 V T = -25 °C: 355.509863 V |
| Voltage for Gain 200: |
T = +20 °C: 395.7351251 V T = -25 °C: 359.6702528 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.479206231 V-1 T = -25 °C: 4.934667232 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.068028436 V-1 T = -25 °C: 9.290083969 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.23496881 V-1 T = -25 °C: 14.82065941 V-1 |
| Break-through voltage: |
T = +20 °C: 404.1166468 V T = -25 °C: 374.4519182 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history