Show Hamamatsu Avalanche Photo Diode 2503027779
This is all the information about APD 2503027779. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2503027779 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
A11 |
| Break-through voltage: |
420 V |
| Voltage for Gain 100 (T=+25°C): |
392 V |
| Dark current: |
7.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
174 |
| Position in Box: |
5 |
| EP1 batch: |
13 |
| EP1 batch after irradiation: |
10097 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
19. Feb 2019 |
| Sent for analysis after irradiation: |
01. Apr 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
27. Mar 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
27. Mar 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 391.6258988 V T = -25 °C: 355.5180146 V |
| Voltage for Gain 150: |
T = +20 °C: 399.5717375 V T = -25 °C: 363.1522735 V |
| Voltage for Gain 200: |
T = +20 °C: 403.9917694 V T = -25 °C: 367.4263246 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.531784062 V-1 T = -25 °C: 4.654680411 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.705609644 V-1 T = -25 °C: 9.464246867 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.49059747 V-1 T = -25 °C: 15.00536236 V-1 |
| Break-through voltage: |
T = +20 °C: 419.0562194 V T = -25 °C: 382.4972715 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history