Show Hamamatsu Avalanche Photo Diode 2501027588
This is all the information about APD 2501027588. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2501027588 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1910021018/2501027588 |
| Unit: |
#929 (barcode 1309010219) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G09 |
| Break-through voltage: |
408 V |
| Voltage for Gain 100 (T=+25°C): |
379.9 V |
| Dark current: |
4.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
58 |
| Position in Box: |
16 |
| EP1 batch: |
9 |
| EP1 batch after irradiation: |
10092 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
19. Feb 2019 |
| Sent for analysis after irradiation: |
01. Apr 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
27. Mar 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
27. Mar 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 379.4851359 V T = -25 °C: 344.3539132 V |
| Voltage for Gain 150: |
T = +20 °C: 387.2923552 V T = -25 °C: 351.7334826 V |
| Voltage for Gain 200: |
T = +20 °C: 391.6534837 V T = -25 °C: 355.8620637 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.530765524 V-1 T = -25 °C: 4.863345756 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.855426803 V-1 T = -25 °C: 8.980156716 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.87983369 V-1 T = -25 °C: 16.12535521 V-1 |
| Break-through voltage: |
T = +20 °C: 406.9958821 V T = -25 °C: 371.2617207 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
