Show Hamamatsu Avalanche Photo Diode 2420027517
This is all the information about APD 2420027517. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2420027517 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2420027517/1906020751 |
| Unit: |
#2544 (barcode 1309025411) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D08 |
| Break-through voltage: |
405 V |
| Voltage for Gain 100 (T=+25°C): |
375.9 V |
| Dark current: |
4.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
27 |
| Position in Box: |
11 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10043 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
16. Jan 2019 |
| Sent for analysis after irradiation: |
28. Jan 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
21. Jan 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
22. Jan 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 376.1404641 V T = -25 °C: 341.4954653 V |
| Voltage for Gain 150: |
T = +20 °C: 384.0031333 V T = -25 °C: 348.7607937 V |
| Voltage for Gain 200: |
T = +20 °C: 388.3243994 V T = -25 °C: 352.7661971 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.60804784 V-1 T = -25 °C: 4.470066369 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.80412195 V-1 T = -25 °C: 9.198260289 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.51525182 V-1 T = -25 °C: 16.70307492 V-1 |
| Break-through voltage: |
T = +20 °C: 403.8159924 V T = -25 °C: 367.8788043 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
