Show Hamamatsu Avalanche Photo Diode 2418027370
This is all the information about APD 2418027370. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2418027370 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
F04 |
Break-through voltage: |
403 V |
Voltage for Gain 100 (T=+25°C): |
374 V |
Dark current: |
3.3 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
25 |
Position in Box: |
4 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10040 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
16. Jan 2019 |
Sent for analysis after irradiation: |
28. Jan 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
21. Jan 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
22. Jan 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 374.2752257 V T = -25 °C: 339.5892688 V |
Voltage for Gain 150: |
T = +20 °C: 382.0818547 V T = -25 °C: 346.9040181 V |
Voltage for Gain 200: |
T = +20 °C: 386.4620525 V T = -25 °C: 351.0185733 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.430587799 V-1 T = -25 °C: 4.935936838 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.039521917 V-1 T = -25 °C: 9.597740606 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.26558633 V-1 T = -25 °C: 15.55083386 V-1 |
Break-through voltage: |
T = +20 °C: 402.1199149 V T = -25 °C: 365.8840991 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history