Show Hamamatsu Avalanche Photo Diode 2417027257
This is all the information about APD 2417027257. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2417027257 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2402025992/2417027257 |
| Unit: |
#870 (barcode 1309009718) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F03 |
| Break-through voltage: |
407 V |
| Voltage for Gain 100 (T=+25°C): |
379.1 V |
| Dark current: |
2.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
22 |
| Position in Box: |
46 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10037 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
16. Jan 2019 |
| Sent for analysis after irradiation: |
25. Jan 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
21. Jan 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
22. Jan 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 379.4943557 V T = -25 °C: 343.9464756 V |
| Voltage for Gain 150: |
T = +20 °C: 387.2608324 V T = -25 °C: 351.3546941 V |
| Voltage for Gain 200: |
T = +20 °C: 391.6007592 V T = -25 °C: 355.5144145 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.485699666 V-1 T = -25 °C: 5.02924899 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.957594775 V-1 T = -25 °C: 9.150536337 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.53328322 V-1 T = -25 °C: 15.98342804 V-1 |
| Break-through voltage: |
T = +20 °C: 405.7225832 V T = -25 °C: 371.147032 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
