Show Hamamatsu Avalanche Photo Diode 2416027172
This is all the information about APD 2416027172. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2416027172 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C08 |
| Break-through voltage: |
406 V |
| Voltage for Gain 100 (T=+25°C): |
377.6 V |
| Dark current: |
7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
21 |
| Position in Box: |
31 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10034 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
16. Jan 2019 |
| Sent for analysis after irradiation: |
25. Jan 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
21. Jan 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
22. Jan 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 378.3353075 V T = -25 °C: 343.2793678 V |
| Voltage for Gain 150: |
T = +20 °C: 386.143786 V T = -25 °C: 350.6472066 V |
| Voltage for Gain 200: |
T = +20 °C: 390.5126364 V T = -25 °C: 354.7859359 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.742138438 V-1 T = -25 °C: 4.6884724 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.216141362 V-1 T = -25 °C: 9.277932527 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.03107596 V-1 T = -25 °C: 16.08914642 V-1 |
| Break-through voltage: |
T = +20 °C: 405.3277355 V T = -25 °C: 369.2360329 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
