Show Hamamatsu Avalanche Photo Diode 2416027170
This is all the information about APD 2416027170. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2416027170 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2416027170/2511028375 |
| Unit: |
#926 (barcode 1309010189) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C10 |
| Break-through voltage: |
409 V |
| Voltage for Gain 100 (T=+25°C): |
380.8 V |
| Dark current: |
5.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
21 |
| Position in Box: |
29 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10034 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
16. Jan 2019 |
| Sent for analysis after irradiation: |
25. Jan 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
21. Jan 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
22. Jan 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 381.6767646 V T = -25 °C: 346.2393134 V |
| Voltage for Gain 150: |
T = +20 °C: 389.4985298 V T = -25 °C: 353.6560542 V |
| Voltage for Gain 200: |
T = +20 °C: 393.8552878 V T = -25 °C: 357.8219914 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.60954488 V-1 T = -25 °C: 4.680708085 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.907166126 V-1 T = -25 °C: 9.218876944 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.09489824 V-1 T = -25 °C: 15.84696457 V-1 |
| Break-through voltage: |
T = +20 °C: 408.6727909 V T = -25 °C: 372.3438008 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
