Show Hamamatsu Avalanche Photo Diode 2413026979
This is all the information about APD 2413026979. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2413026979 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B13 |
| Break-through voltage: |
422 V |
| Voltage for Gain 100 (T=+25°C): |
393.5 V |
| Dark current: |
5.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
18 |
| Position in Box: |
6 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10029 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
16. Jan 2019 |
| Sent for analysis after irradiation: |
28. Jan 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
21. Jan 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
22. Jan 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 394.2066364 V T = -25 °C: 357.6807451 V |
| Voltage for Gain 150: |
T = +20 °C: 402.0805856 V T = -25 °C: 365.3603627 V |
| Voltage for Gain 200: |
T = +20 °C: 406.4157067 V T = -25 °C: 369.6394426 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.410935 V-1 T = -25 °C: 4.667122757 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.297459434 V-1 T = -25 °C: 8.695130361 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.29508161 V-1 T = -25 °C: 15.2897086 V-1 |
| Break-through voltage: |
T = +20 °C: 421.0578781 V T = -25 °C: 384.717585 V |
| |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
