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Show Hamamatsu Avalanche Photo Diode 2413026960


This is all the information about APD 2413026960. If it is wrong, edit the data.

Subdetector specification:  
Serial: 2413026960
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: Bochum
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: E13
Break-through voltage: 417 V
Voltage for Gain 100 (T=+25°C): 388 V
Dark current: 8.3 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 28
Position in Box: 46
EP1 batch: 207
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 150: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 200: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 100: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 150: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 200: T = +20 °C: none     T = -25 °C: none
Break-through voltage: T = +20 °C: none     T = -25 °C: none
   
Notes:


Characteristics

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Progression of the current during irradiation

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Version history

Time Author Change comment
05. Feb 2021 10:51:29 CET jreher Updated box and position via API.
03. Feb 2021 18:17:35 CET jreher Updated box and position via API.
27. Nov 2019 19:34:29 CET jreher Updated APD location via API.
25. Nov 2019 17:13:07 CET jreher Updated box and position via API.
04. Nov 2019 17:07:03 CET spankonin Updated APD batch assignment via API.
04. Jul 2019 11:10:03 CEST jreher Updated APD location via API.
03. Jan 2019 00:11:40 CET Tobias Corrected dark current unit.
12. Jan 2018 13:11:46 CET Tobias Imported from Hamamatsu datasheet.