Show Hamamatsu Avalanche Photo Diode 2411026767
This is all the information about APD 2411026767. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2411026767 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
At GSI for QE measurement |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D08 |
| Break-through voltage: |
411 V |
| Voltage for Gain 100 (T=+25°C): |
382.7 V |
| Dark current: |
4.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
16 |
| Position in Box: |
3 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10025 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
12. Nov 2018 |
| Sent for analysis after irradiation: |
13. Dec 2018 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
07. Dec 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
10. Dec 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 383.1041353 V T = -25 °C: 347.597409 V |
| Voltage for Gain 150: |
T = +20 °C: 390.9988471 V T = -25 °C: 355.0711367 V |
| Voltage for Gain 200: |
T = +20 °C: 395.3973777 V T = -25 °C: 359.2683248 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.399421939 V-1 T = -25 °C: 4.841814944 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.187353058 V-1 T = -25 °C: 9.574207512 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.90330464 V-1 T = -25 °C: 14.76130186 V-1 |
| Break-through voltage: |
T = +20 °C: 410.1318933 V T = -25 °C: 373.6495256 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
