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Show Hamamatsu Avalanche Photo Diode 0611004853

This is all the information about APD 0611004853. If it is wrong, edit the data.

Subdetector specification:  
Serial: 0611004853
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: Giessen (mounted in Slice)
Installation information:  
Label: none
Manufacturer information:  
Wafer position: F08
Break-through voltage: 444 V
Voltage for Gain 100 (T=+25°C): 417 V
Dark current: 13.3 nA
Screening Logistics:  
Available: Yes
Storage Box: none
Position in Box: none
EP1 batch: none
EP1 batch after irradiation: none
Grid number: 634
Position in grid: 14
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: 29. Nov 2016
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
Date: none
Temperature: none
Duration: none
Measurement results:  
Voltage for Gain 100: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 150: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 200: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 100: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 150: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 200: T = +20 °C: none     T = -25 °C: none
Break-through voltage: T = +20 °C: none     T = -25 °C: none


Temperature Measurement Notes
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Progression of the current during irradiation

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Version history

Time Author Change comment
17. Apr 2021 01:10:01 CEST jreher Updated APD location via API.
29. Nov 2016 11:53:15 CET markus.moritz Entered return for assembly date.
21. Nov 2016 17:44:55 CET Tobias Assigned to grid via information extracted from APD DB.
21. Nov 2016 17:33:46 CET tobias Manually added based on APD lab DB export.