Show Hamamatsu Avalanche Photo Diode 0611004889
This is all the information about APD 0611004889. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0611004889 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B06 |
| Break-through voltage: |
451 V |
| Voltage for Gain 100 (T=+25°C): |
422.4 V |
| Dark current: |
13.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
265 |
| Position in Box: |
40 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10297 |
| |
|
| Shipment: |
|
| Grid number: |
638 |
| Position in grid: |
3 |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 422.6638873 V T = -25 °C: 385.852994 V |
| Voltage for Gain 150: |
T = +20 °C: 430.4780303 V T = -25 °C: 393.6289054 V |
| Voltage for Gain 200: |
T = +20 °C: 434.7880297 V T = -25 °C: 397.926704 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.390539437 V-1 T = -25 °C: 4.688910028 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.619558685 V-1 T = -25 °C: 9.4298411 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.08461406 V-1 T = -25 °C: 14.85664063 V-1 |
| Break-through voltage: |
T = +20 °C: 439.9900354 V T = -25 °C: 413.3973985 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
