Show Hamamatsu Avalanche Photo Diode 2319025782
This is all the information about APD 2319025782. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2319025782 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D14 |
| Break-through voltage: |
411 V |
| Voltage for Gain 100 (T=+25°C): |
381.9 V |
| Dark current: |
4.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
58 |
| Position in Box: |
48 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10226 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
21. Aug 2019 |
| Sent for analysis after irradiation: |
15. Oct 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
09. Oct 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
12. Oct 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 382.2134299 V T = -25 °C: 346.6312508 V |
| Voltage for Gain 150: |
T = +20 °C: 390.0869529 V T = -25 °C: 354.0665778 V |
| Voltage for Gain 200: |
T = +20 °C: 394.476442 V T = -25 °C: 358.2546028 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.473019655 V-1 T = -25 °C: 4.971529957 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.707739685 V-1 T = -25 °C: 9.19132734 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.1690801 V-1 T = -25 °C: 14.41857092 V-1 |
| Break-through voltage: |
T = +20 °C: 409.9706364 V T = -25 °C: 373.6683984 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history