Show Hamamatsu Avalanche Photo Diode 2319025773
This is all the information about APD 2319025773. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2319025773 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G11 |
| Break-through voltage: |
411 V |
| Voltage for Gain 100 (T=+25°C): |
383.7 V |
| Dark current: |
5.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
58 |
| Position in Box: |
44 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10226 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
21. Aug 2019 |
| Sent for analysis after irradiation: |
15. Oct 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
09. Oct 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
12. Oct 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 382.9988618 V T = -25 °C: 348.6657942 V |
| Voltage for Gain 150: |
T = +20 °C: 390.8442392 V T = -25 °C: 356.3760784 V |
| Voltage for Gain 200: |
T = +20 °C: 395.1989001 V T = -25 °C: 360.8439759 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.629217113 V-1 T = -25 °C: 4.579156316 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.185553786 V-1 T = -25 °C: 8.477629326 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.32061593 V-1 T = -25 °C: 14.0831091 V-1 |
| Break-through voltage: |
T = +20 °C: 410.929475 V T = -25 °C: 374.1775613 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history