Show Hamamatsu Avalanche Photo Diode 2319025750
This is all the information about APD 2319025750. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2319025750 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2319025750/2312025189 |
| Unit: |
#1164 (barcode 1309012671) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C08 |
| Break-through voltage: |
410 V |
| Voltage for Gain 100 (T=+25°C): |
381.4 V |
| Dark current: |
4.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
220 |
| Position in Box: |
12 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10225 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
21. Aug 2019 |
| Sent for analysis after irradiation: |
15. Oct 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
09. Oct 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
12. Oct 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 381.3760714 V T = -25 °C: 346.1246458 V |
| Voltage for Gain 150: |
T = +20 °C: 389.1973147 V T = -25 °C: 353.5147687 V |
| Voltage for Gain 200: |
T = +20 °C: 393.5500539 V T = -25 °C: 357.6374252 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.481653129 V-1 T = -25 °C: 4.872029951 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.792104535 V-1 T = -25 °C: 9.940308756 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.32900904 V-1 T = -25 °C: 15.89872796 V-1 |
| Break-through voltage: |
T = +20 °C: 408.9527219 V T = -25 °C: 372.9531904 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history