Show Hamamatsu Avalanche Photo Diode 2317025587
This is all the information about APD 2317025587. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2317025587 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2405026306/2317025587 |
| Unit: |
#1014 (barcode 1309011322) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E08 |
| Break-through voltage: |
409 V |
| Voltage for Gain 100 (T=+25°C): |
380.5 V |
| Dark current: |
6.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
216 |
| Position in Box: |
42 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10221 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
21. Aug 2019 |
| Sent for analysis after irradiation: |
15. Oct 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
09. Oct 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
12. Oct 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 380.8128675 V T = -25 °C: 345.4843926 V |
| Voltage for Gain 150: |
T = +20 °C: 388.6850609 V T = -25 °C: 352.8547335 V |
| Voltage for Gain 200: |
T = +20 °C: 393.0621138 V T = -25 °C: 357.0000904 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.651515385 V-1 T = -25 °C: 4.745849636 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.191837991 V-1 T = -25 °C: 9.571481414 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.28033316 V-1 T = -25 °C: 15.14963338 V-1 |
| Break-through voltage: |
T = +20 °C: 408.5294738 V T = -25 °C: 372.2434019 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history