Show Hamamatsu Avalanche Photo Diode 2317025574
This is all the information about APD 2317025574. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2317025574 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2303024327/2317025574 |
| Unit: |
#3409 (barcode 1309038305) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D10 |
| Break-through voltage: |
413 V |
| Voltage for Gain 100 (T=+25°C): |
384.7 V |
| Dark current: |
6.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
233 |
| Position in Box: |
22 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10218 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
21. Aug 2019 |
| Sent for analysis after irradiation: |
15. Oct 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
09. Oct 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
12. Oct 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 385.0781457 V T = -25 °C: 349.1514253 V |
| Voltage for Gain 150: |
T = +20 °C: 392.9696653 V T = -25 °C: 356.6286353 V |
| Voltage for Gain 200: |
T = +20 °C: 397.3696778 V T = -25 °C: 360.8009105 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.562958923 V-1 T = -25 °C: 4.767557442 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.89660575 V-1 T = -25 °C: 9.703260346 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.79903017 V-1 T = -25 °C: 15.35871794 V-1 |
| Break-through voltage: |
T = +20 °C: 412.6197148 V T = -25 °C: 376.030676 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history