Show Hamamatsu Avalanche Photo Diode 2316025515
This is all the information about APD 2316025515. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2316025515 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2316025515/2608029771 |
| Unit: |
#3155 (barcode 1309036240) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B04 |
| Break-through voltage: |
410 V |
| Voltage for Gain 100 (T=+25°C): |
380.7 V |
| Dark current: |
6.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
58 |
| Position in Box: |
33 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10225 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
21. Aug 2019 |
| Sent for analysis after irradiation: |
15. Oct 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
09. Oct 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
12. Oct 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 380.8121186 V T = -25 °C: 345.5858251 V |
| Voltage for Gain 150: |
T = +20 °C: 388.7047503 V T = -25 °C: 353.0030531 V |
| Voltage for Gain 200: |
T = +20 °C: 393.1007616 V T = -25 °C: 357.1752247 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.664960928 V-1 T = -25 °C: 4.699552688 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.205996496 V-1 T = -25 °C: 9.463694499 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.29945078 V-1 T = -25 °C: 14.91373162 V-1 |
| Break-through voltage: |
T = +20 °C: 409.1567578 V T = -25 °C: 372.8965697 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history