Show Hamamatsu Avalanche Photo Diode 2316025477
This is all the information about APD 2316025477. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2316025477 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2316025477/2812031699 |
| Unit: |
#2089 (barcode 1309021512) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E05 |
| Break-through voltage: |
409 V |
| Voltage for Gain 100 (T=+25°C): |
379.7 V |
| Dark current: |
10.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
364 |
| Position in Box: |
44 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10548 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 380.0559006 V T = -25 °C: 344.5998838 V |
| Voltage for Gain 150: |
T = +20 °C: 387.8581255 V T = -25 °C: 351.962892 V |
| Voltage for Gain 200: |
T = +20 °C: 392.2022937 V T = -25 °C: 356.0933832 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.605509137 V-1 T = -25 °C: 4.720333465 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.148351476 V-1 T = -25 °C: 9.52540573 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.20463941 V-1 T = -25 °C: 15.14304516 V-1 |
| Break-through voltage: |
T = +20 °C: 408.0858086 V T = -25 °C: 371.6801725 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history