Show Hamamatsu Avalanche Photo Diode 2311025097
This is all the information about APD 2311025097. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2311025097 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2703030210/2311025097 |
| Unit: |
#2897 (barcode 1309032181) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F07 |
| Break-through voltage: |
408 V |
| Voltage for Gain 100 (T=+25°C): |
380.2 V |
| Dark current: |
9.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
215 |
| Position in Box: |
30 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10257 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 379.8998115 V T = -25 °C: 344.5285145 V |
| Voltage for Gain 150: |
T = +20 °C: 387.6738916 V T = -25 °C: 351.8623679 V |
| Voltage for Gain 200: |
T = +20 °C: 391.9884769 V T = -25 °C: 355.9651613 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.695104812 V-1 T = -25 °C: 4.778877551 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.384725025 V-1 T = -25 °C: 9.769260178 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.82323276 V-1 T = -25 °C: 15.64549337 V-1 |
| Break-through voltage: |
T = +20 °C: 407.57373 V T = -25 °C: 371.2784831 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history