Show Hamamatsu Avalanche Photo Diode 2311025089
This is all the information about APD 2311025089. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2311025089 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2311025089/2206024096 |
| Unit: |
#1607 (barcode 1309017744) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G03 |
| Break-through voltage: |
413 V |
| Voltage for Gain 100 (T=+25°C): |
384.5 V |
| Dark current: |
6.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
215 |
| Position in Box: |
42 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10257 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 383.9002435 V T = -25 °C: 348.437426 V |
| Voltage for Gain 150: |
T = +20 °C: 391.7671016 V T = -25 °C: 355.9161337 V |
| Voltage for Gain 200: |
T = +20 °C: 396.1359602 V T = -25 °C: 360.1175244 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.639158891 V-1 T = -25 °C: 4.708203331 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.196486496 V-1 T = -25 °C: 9.48543646 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.32723639 V-1 T = -25 °C: 14.9678234 V-1 |
| Break-through voltage: |
T = +20 °C: 408.6799747 V T = -25 °C: 375.631022 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history