Show Hamamatsu Avalanche Photo Diode 2311025079
This is all the information about APD 2311025079. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2311025079 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2705030391/2311025079 |
| Unit: |
#1633 (barcode 1309014637) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E11 |
| Break-through voltage: |
408 V |
| Voltage for Gain 100 (T=+25°C): |
379.7 V |
| Dark current: |
7.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
227 |
| Position in Box: |
48 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10253 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 379.5090306 V T = -25 °C: 344.0701182 V |
| Voltage for Gain 150: |
T = +20 °C: 387.3566058 V T = -25 °C: 351.4539202 V |
| Voltage for Gain 200: |
T = +20 °C: 391.7208406 V T = -25 °C: 355.5873083 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.441243805 V-1 T = -25 °C: 4.886704928 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.627590482 V-1 T = -25 °C: 9.027151447 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.00419076 V-1 T = -25 °C: 16.02288727 V-1 |
| Break-through voltage: |
T = +20 °C: 407.7659824 V T = -25 °C: 371.1937922 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history