Show Hamamatsu Avalanche Photo Diode 2311025030
This is all the information about APD 2311025030. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2311025030 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2311025030/1915021471 |
| Unit: |
#1769 (barcode 1309018406) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C13 |
| Break-through voltage: |
413 V |
| Voltage for Gain 100 (T=+25°C): |
383.9 V |
| Dark current: |
4.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
218 |
| Position in Box: |
31 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10260 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 383.6903075 V T = -25 °C: 348.1286412 V |
| Voltage for Gain 150: |
T = +20 °C: 391.5870875 V T = -25 °C: 355.5966014 V |
| Voltage for Gain 200: |
T = +20 °C: 395.9742883 V T = -25 °C: 359.7761113 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.651476891 V-1 T = -25 °C: 4.791431601 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.191162391 V-1 T = -25 °C: 9.656027561 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.22805632 V-1 T = -25 °C: 15.26989641 V-1 |
| Break-through voltage: |
T = +20 °C: 411.7618374 V T = -25 °C: 375.5123207 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history