Show Hamamatsu Avalanche Photo Diode 2310025010
This is all the information about APD 2310025010. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2310025010 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2314025315/2310025010 |
| Unit: |
#2784 (barcode 1309028306) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D09 |
| Break-through voltage: |
410 V |
| Voltage for Gain 100 (T=+25°C): |
380.8 V |
| Dark current: |
6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
219 |
| Position in Box: |
15 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10245 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 380.6309758 V T = -25 °C: 345.1843356 V |
| Voltage for Gain 150: |
T = +20 °C: 388.5144301 V T = -25 °C: 352.5905339 V |
| Voltage for Gain 200: |
T = +20 °C: 392.9059652 V T = -25 °C: 356.7494434 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.68031494 V-1 T = -25 °C: 4.796721588 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.177915982 V-1 T = -25 °C: 9.665157713 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.16061769 V-1 T = -25 °C: 15.24530788 V-1 |
| Break-through voltage: |
T = +20 °C: 408.8051853 V T = -25 °C: 372.2460031 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history