Show Hamamatsu Avalanche Photo Diode 2310024987
This is all the information about APD 2310024987. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2310024987 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2310024987/2319025759 |
| Unit: |
#1066 (barcode 1309011537) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F06 |
| Break-through voltage: |
406 V |
| Voltage for Gain 100 (T=+25°C): |
377.7 V |
| Dark current: |
6.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
219 |
| Position in Box: |
32 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10246 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 377.2769991 V T = -25 °C: 342.2378709 V |
| Voltage for Gain 150: |
T = +20 °C: 385.0939644 V T = -25 °C: 349.5903263 V |
| Voltage for Gain 200: |
T = +20 °C: 389.466704 V T = -25 °C: 353.7111091 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.583068442 V-1 T = -25 °C: 4.895176192 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.015117278 V-1 T = -25 °C: 9.077869928 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.00873377 V-1 T = -25 °C: 16.2458719 V-1 |
| Break-through voltage: |
T = +20 °C: 405.5812596 V T = -25 °C: 369.3332005 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history