Show Hamamatsu Avalanche Photo Diode 2310024950
This is all the information about APD 2310024950. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2310024950 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1910021039/2310024950 |
| Unit: |
#989 (barcode 1309010943) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E09 |
| Break-through voltage: |
409 V |
| Voltage for Gain 100 (T=+25°C): |
380.5 V |
| Dark current: |
6.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
224 |
| Position in Box: |
24 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10250 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 380.2837722 V T = -25 °C: 344.9981156 V |
| Voltage for Gain 150: |
T = +20 °C: 388.1364587 V T = -25 °C: 352.3737553 V |
| Voltage for Gain 200: |
T = +20 °C: 392.5269693 V T = -25 °C: 356.5116728 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.51005196 V-1 T = -25 °C: 4.932041999 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.817756334 V-1 T = -25 °C: 9.146695398 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.37332903 V-1 T = -25 °C: 16.28472603 V-1 |
| Break-through voltage: |
T = +20 °C: 408.3518855 V T = -25 °C: 371.9572749 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history