Show Hamamatsu Avalanche Photo Diode 2309024885
This is all the information about APD 2309024885. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2309024885 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C05 |
| Break-through voltage: |
414 V |
| Voltage for Gain 100 (T=+25°C): |
385.6 V |
| Dark current: |
5.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
351 |
| Position in Box: |
39 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10533 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 385.4494762 V T = -25 °C: 349.9127655 V |
| Voltage for Gain 150: |
T = +20 °C: 393.274989 V T = -25 °C: 357.3169743 V |
| Voltage for Gain 200: |
T = +20 °C: 397.6182503 V T = -25 °C: 361.4607308 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.460759519 V-1 T = -25 °C: 4.928580873 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.701315838 V-1 T = -25 °C: 9.129446732 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.13456614 V-1 T = -25 °C: 16.115216 V-1 |
| Break-through voltage: |
T = +20 °C: 412.9204746 V T = -25 °C: 376.6924917 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
