Show Hamamatsu Avalanche Photo Diode 2308024800
This is all the information about APD 2308024800. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
2308024800 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
A07 |
Break-through voltage: |
416 V |
Voltage for Gain 100 (T=+25°C): |
387.7 V |
Dark current: |
4.7 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
91 |
Position in Box: |
31 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10261 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 387.6212911 V T = -25 °C: 351.7683035 V |
Voltage for Gain 150: |
T = +20 °C: 395.4841329 V T = -25 °C: 359.3113267 V |
Voltage for Gain 200: |
T = +20 °C: 399.8375667 V T = -25 °C: 363.5414979 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.377793934 V-1 T = -25 °C: 4.887446997 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.548323986 V-1 T = -25 °C: 8.996299309 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.78578946 V-1 T = -25 °C: 15.81401055 V-1 |
Break-through voltage: |
T = +20 °C: 414.6806183 V T = -25 °C: 378.7268824 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history