Show Hamamatsu Avalanche Photo Diode 2308024799
This is all the information about APD 2308024799. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2308024799 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2308024799/2304024411 |
| Unit: |
#1385 (barcode 1309014293) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F07 |
| Break-through voltage: |
410 V |
| Voltage for Gain 100 (T=+25°C): |
381.6 V |
| Dark current: |
7.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
254 |
| Position in Box: |
4 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10261 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 381.0129489 V T = -25 °C: 345.6823938 V |
| Voltage for Gain 150: |
T = +20 °C: 388.8471317 V T = -25 °C: 353.0500797 V |
| Voltage for Gain 200: |
T = +20 °C: 393.1954923 V T = -25 °C: 357.1802095 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.645928255 V-1 T = -25 °C: 4.714182362 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.210676556 V-1 T = -25 °C: 9.556234274 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.49060671 V-1 T = -25 °C: 15.19815034 V-1 |
| Break-through voltage: |
T = +20 °C: 409.1651462 V T = -25 °C: 372.7533441 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history