Show Hamamatsu Avalanche Photo Diode 2308024770
This is all the information about APD 2308024770. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2308024770 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2308024770/2306024635 |
| Unit: |
#1403 (barcode 1309015481) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
A10 |
| Break-through voltage: |
415 V |
| Voltage for Gain 100 (T=+25°C): |
387.5 V |
| Dark current: |
4.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
254 |
| Position in Box: |
15 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10261 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 387.1780951 V T = -25 °C: 351.3526635 V |
| Voltage for Gain 150: |
T = +20 °C: 395.0547159 V T = -25 °C: 358.8942117 V |
| Voltage for Gain 200: |
T = +20 °C: 399.4485504 V T = -25 °C: 363.1196556 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.517306005 V-1 T = -25 °C: 4.696525086 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.907658575 V-1 T = -25 °C: 9.446944066 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.77234027 V-1 T = -25 °C: 14.79795637 V-1 |
| Break-through voltage: |
T = +20 °C: 414.9434906 V T = -25 °C: 378.8518655 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history