Show Hamamatsu Avalanche Photo Diode 2305024540
This is all the information about APD 2305024540. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2305024540 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2309024921/2305024540 |
| Unit: |
#1068 (barcode 1309011551) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D10 |
| Break-through voltage: |
414 V |
| Voltage for Gain 100 (T=+25°C): |
384.7 V |
| Dark current: |
6.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
207 |
| Position in Box: |
45 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10239 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 384.6330485 V T = -25 °C: 348.9950926 V |
| Voltage for Gain 150: |
T = +20 °C: 392.529327 V T = -25 °C: 356.4231002 V |
| Voltage for Gain 200: |
T = +20 °C: 396.9027003 V T = -25 °C: 360.5849026 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.381027108 V-1 T = -25 °C: 4.885298008 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.478157818 V-1 T = -25 °C: 9.037610224 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.59954379 V-1 T = -25 °C: 16.02073938 V-1 |
| Break-through voltage: |
T = +20 °C: 412.8314747 V T = -25 °C: 376.2621623 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history