Show Hamamatsu Avalanche Photo Diode 0720006874
This is all the information about APD 0720006874. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0720006874 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D09 |
| Break-through voltage: |
416 V |
| Voltage for Gain 100 (T=+25°C): |
387.6 V |
| Dark current: |
11.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
183 |
| Position in Box: |
29 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10106 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
18. Apr 2019 |
| Sent for analysis after irradiation: |
09. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
04. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
05. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 387.7748257 V T = -25 °C: 352.290616 V |
| Voltage for Gain 150: |
T = +20 °C: 395.636983 V T = -25 °C: 359.8309363 V |
| Voltage for Gain 200: |
T = +20 °C: 399.9867087 V T = -25 °C: 364.0976611 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.378989149 V-1 T = -25 °C: 4.84490999 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.586545634 V-1 T = -25 °C: 9.680527593 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.12844526 V-1 T = -25 °C: 15.40177539 V-1 |
| Break-through voltage: |
T = +20 °C: 415.4875756 V T = -25 °C: 378.628725 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history