Show Hamamatsu Avalanche Photo Diode 2013022370
This is all the information about APD 2013022370. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2013022370 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E07 |
| Break-through voltage: |
400 V |
| Voltage for Gain 100 (T=+25°C): |
372.3 V |
| Dark current: |
22.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
328 |
| Position in Box: |
49 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
none |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
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|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 373.2028487 V T = -25 °C: 340.556306 V |
| Voltage for Gain 150: |
T = +20 °C: 380.7562869 V T = -25 °C: 347.6897701 V |
| Voltage for Gain 200: |
T = +20 °C: 384.983384 V T = -25 °C: 351.6822793 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.693922682 V-1 T = -25 °C: 4.678586261 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.482410601 V-1 T = -25 °C: 9.470539983 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.88179798 V-1 T = -25 °C: 20.9042455 V-1 |
| Break-through voltage: |
T = +20 °C: 402.5023034 V T = -25 °C: 365.7066788 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
