Show Hamamatsu Avalanche Photo Diode 2012022316
This is all the information about APD 2012022316. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2012022316 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
F08 |
Break-through voltage: |
402 V |
Voltage for Gain 100 (T=+25°C): |
374.5 V |
Dark current: |
19.9 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
406 |
Position in Box: |
11 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10638 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 375.130853 V T = -25 °C: 341.2449275 V |
Voltage for Gain 150: |
T = +20 °C: 382.748977 V T = -25 °C: 348.3107902 V |
Voltage for Gain 200: |
T = +20 °C: 386.9928165 V T = -25 °C: 352.2797895 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.717635922 V-1 T = -25 °C: 5.053133257 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.458352051 V-1 T = -25 °C: 9.582330776 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.84819483 V-1 T = -25 °C: 15.36382325 V-1 |
Break-through voltage: |
T = +20 °C: 401.8958162 V T = -25 °C: 366.5383685 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history