Show Hamamatsu Avalanche Photo Diode 2010022232
This is all the information about APD 2010022232. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2010022232 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E07 |
| Break-through voltage: |
404 V |
| Voltage for Gain 100 (T=+25°C): |
375.4 V |
| Dark current: |
14.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
364 |
| Position in Box: |
48 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10548 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 376.0846686 V T = -25 °C: 342.0157504 V |
| Voltage for Gain 150: |
T = +20 °C: 383.6762837 V T = -25 °C: 349.0848676 V |
| Voltage for Gain 200: |
T = +20 °C: 387.9119021 V T = -25 °C: 353.0600455 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.772266855 V-1 T = -25 °C: 5.11456602 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.541178146 V-1 T = -25 °C: 9.805665986 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.08527726 V-1 T = -25 °C: 15.77395 V-1 |
| Break-through voltage: |
T = +20 °C: 403.320335 V T = -25 °C: 367.8369016 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
