Show Hamamatsu Avalanche Photo Diode 2010022226
This is all the information about APD 2010022226. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2010022226 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
D12 |
Break-through voltage: |
402 V |
Voltage for Gain 100 (T=+25°C): |
374.2 V |
Dark current: |
23.1 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
225 |
Position in Box: |
5 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10216 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
21. Aug 2019 |
Sent for analysis after irradiation: |
15. Oct 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
09. Oct 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
12. Oct 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 374.3305884 V T = -25 °C: 340.8258465 V |
Voltage for Gain 150: |
T = +20 °C: 381.945317 V T = -25 °C: 347.8867275 V |
Voltage for Gain 200: |
T = +20 °C: 386.2153042 V T = -25 °C: 351.8538218 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.688690411 V-1 T = -25 °C: 5.265364967 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.371451418 V-1 T = -25 °C: 10.11494593 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.66298003 V-1 T = -25 °C: 16.54923075 V-1 |
Break-through voltage: |
T = +20 °C: 401.8173106 V T = -25 °C: 366.6483095 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history