Show Hamamatsu Avalanche Photo Diode 2009022172
This is all the information about APD 2009022172. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2009022172 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2009022172/0712006364 |
| Unit: |
#2796 (barcode 1309026494) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D13 |
| Break-through voltage: |
409 V |
| Voltage for Gain 100 (T=+25°C): |
380.1 V |
| Dark current: |
9.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
232 |
| Position in Box: |
19 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10215 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
21. Aug 2019 |
| Sent for analysis after irradiation: |
15. Oct 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
09. Oct 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
12. Oct 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 380.5215098 V T = -25 °C: 345.8108568 V |
| Voltage for Gain 150: |
T = +20 °C: 388.257386 V T = -25 °C: 353.0200395 V |
| Voltage for Gain 200: |
T = +20 °C: 392.5957895 V T = -25 °C: 357.0759189 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.458020651 V-1 T = -25 °C: 5.109305992 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.833695961 V-1 T = -25 °C: 9.661997812 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.53640975 V-1 T = -25 °C: 15.42258948 V-1 |
| Break-through voltage: |
T = +20 °C: 408.3092686 V T = -25 °C: 372.2805577 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history