Show Hamamatsu Avalanche Photo Diode 2009022113
This is all the information about APD 2009022113. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2009022113 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D07 |
| Break-through voltage: |
400 V |
| Voltage for Gain 100 (T=+25°C): |
372.2 V |
| Dark current: |
16.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
358 |
| Position in Box: |
16 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10544 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 372.6477177 V T = -25 °C: 339.0606052 V |
| Voltage for Gain 150: |
T = +20 °C: 380.2519472 V T = -25 °C: 346.0541638 V |
| Voltage for Gain 200: |
T = +20 °C: 384.5185324 V T = -25 °C: 349.9707165 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.885653605 V-1 T = -25 °C: 5.120284207 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.869583801 V-1 T = -25 °C: 9.795749879 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.50061972 V-1 T = -25 °C: 15.91136111 V-1 |
| Break-through voltage: |
T = +20 °C: 399.8514342 V T = -25 °C: 364.4574465 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
