Show Hamamatsu Avalanche Photo Diode 2008022089
This is all the information about APD 2008022089. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
2008022089 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
A07 |
Break-through voltage: |
404 V |
Voltage for Gain 100 (T=+25°C): |
376.3 V |
Dark current: |
20.2 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
234 |
Position in Box: |
30 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10213 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
21. Aug 2019 |
Sent for analysis after irradiation: |
15. Oct 2019 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
09. Oct 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
12. Oct 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 377.2734007 V T = -25 °C: 343.0858193 V |
Voltage for Gain 150: |
T = +20 °C: 385.0527992 V T = -25 °C: 350.3248074 V |
Voltage for Gain 200: |
T = +20 °C: 389.4181263 V T = -25 °C: 354.407718 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.577588625 V-1 T = -25 °C: 5.008551162 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.972309731 V-1 T = -25 °C: 9.385268535 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 13.83543107 V-1 T = -25 °C: 14.75113795 V-1 |
Break-through voltage: |
T = +20 °C: 403.6635758 V T = -25 °C: 368.2255823 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history