Show Hamamatsu Avalanche Photo Diode 2008022076
This is all the information about APD 2008022076. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2008022076 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F07 |
| Break-through voltage: |
401 V |
| Voltage for Gain 100 (T=+25°C): |
372.9 V |
| Dark current: |
11.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
259 |
| Position in Box: |
14 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10233 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
21. Aug 2019 |
| Sent for analysis after irradiation: |
15. Oct 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
09. Oct 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
12. Oct 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 373.5550867 V T = -25 °C: 339.4910798 V |
| Voltage for Gain 150: |
T = +20 °C: 381.2453437 V T = -25 °C: 346.6267707 V |
| Voltage for Gain 200: |
T = +20 °C: 385.5603577 V T = -25 °C: 350.6406684 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.517872627 V-1 T = -25 °C: 4.895542786 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.821368913 V-1 T = -25 °C: 10.0886352 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.25541209 V-1 T = -25 °C: 16.2362553 V-1 |
| Break-through voltage: |
T = +20 °C: 400.6800942 V T = -25 °C: 365.2669883 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history