Show Hamamatsu Avalanche Photo Diode 2008022050
					
					This is all the information about APD 2008022050. If it is wrong, edit the data.
					
						
							| Subdetector specification: | 
							  | 
						
						
							| Serial: | 
							2008022050 | 
						
						
							| Type: | 
							Hamamatsu Avalanche Photo Diode | 
						
						
							| Detector: | 
							assigned to 2008022050/0812008089 | 
						
						
							| Unit: | 
							#1595 (barcode 1309016983) | 
						
						
							| Preamp: | 
							0 | 
						
						
							| Current location: | 
							Bochum | 
						
						
							|   | 
							  | 
						
						
							| Installation information: | 
							  | 
						
						
							| Label: | 
							blue | 
						
						
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							  | 
						
						
							| Manufacturer information: | 
							  | 
						
						
							| Wafer position: | 
							H10 | 
						
						
							| Break-through voltage: | 
							406 V | 
						
						
							| Voltage for Gain 100 (T=+25°C): | 
							377.9 V | 
						
						
							| Dark current: | 
							18.3 nA | 
						
						
							|   | 
							  | 
						
						
							| Screening Logistics: | 
							  | 
						
						
							| Available: | 
							No | 
						
						
							| Storage Box: | 
							204 | 
						
						
							| Position in Box: | 
							34 | 
						
						
							| EP1 batch: | 
							none | 
						
						
							| EP1 batch after irradiation: | 
							10232 | 
						
						
							|   | 
							  | 
						
						
							| Shipment: | 
							  | 
						
						
							| Grid number: | 
							none | 
						
						
							| Position in grid: | 
							none | 
						
						
							| Arrival for irradiation: | 
							21. Aug 2019 | 
						
						
							| Sent for analysis after irradiation: | 
							15. Oct 2019 | 
						
						
							| Return for assembly: | 
							none | 
						
						
							|   | 
							  | 
						
						
							| Irradiation: | 
							  | 
						
						
							| Date: | 
							09. Oct 2019 | 
						
						
							| Dose used: | 
							37 Gy | 
						
						
							| Temperature: | 
							20 °C | 
						
						
							| Position: | 
							none | 
						
						
							| Bias voltage: | 
							none      | 
						
						
							|   | 
							  | 
						
						
							| Annealing: | 
							  | 
						
						
							| Date: | 
							12. Oct 2019 | 
						
						
							| Temperature: | 
							80 °C | 
						
						
							| Duration: | 
							48 h | 
						
						
							|   | 
							  | 
						
						
							| Measurement results: | 
							  | 
						
						
							| Voltage for Gain 100: | 
							T = +20 °C: 377.7999188 V     T = -25 °C: 343.3458004 V | 
						
						
							| Voltage for Gain 150: | 
							T = +20 °C: 385.5865076 V     T = -25 °C: 350.6184339 V | 
						
						
							| Voltage for Gain 200: | 
							T = +20 °C: 389.9278484 V     T = -25 °C: 354.6938215 V | 
						
						
							| Gain/Voltage slope at M = 100: | 
							T = +20 °C: 4.739686288 V-1     T = -25 °C: 4.906664102 V-1 | 
						
						
							| Gain/Voltage slope at M = 150: | 
							T = +20 °C: 9.433656308 V-1     T = -25 °C: 10.09644971 V-1 | 
						
						
							| Gain/Voltage slope at M = 200: | 
							T = +20 °C: 14.66698401 V-1     T = -25 °C: 16.15099379 V-1 | 
						
						
							| Break-through voltage: | 
							T = +20 °C: 405.3072895 V     T = -25 °C: 369.6877175 V | 
						
						
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							| Notes: | 
							
								
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					Characteristics
					
						
							| Temperature | 
							Measurement | 
							Notes | 
						
						
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					Progression of the current during irradiation
					
						
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