Show Hamamatsu Avalanche Photo Diode 2008022039
This is all the information about APD 2008022039. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2008022039 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
assigned to 3407036900/2008022039 |
Unit: |
#2182 (barcode 1309023721) |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
red |
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Manufacturer information: |
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Wafer position: |
B04 |
Break-through voltage: |
405 V |
Voltage for Gain 100 (T=+25°C): |
376.3 V |
Dark current: |
15.1 nA |
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Screening Logistics: |
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Available: |
No |
Storage Box: |
204 |
Position in Box: |
18 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10232 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
21. Aug 2019 |
Sent for analysis after irradiation: |
15. Oct 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
09. Oct 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
12. Oct 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 376.6545311 V T = -25 °C: 342.2587749 V |
Voltage for Gain 150: |
T = +20 °C: 384.3975194 V T = -25 °C: 349.4720504 V |
Voltage for Gain 200: |
T = +20 °C: 388.7428907 V T = -25 °C: 353.5116257 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.468071596 V-1 T = -25 °C: 4.951872622 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.686384295 V-1 T = -25 °C: 9.241103488 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.96390311 V-1 T = -25 °C: 16.70938909 V-1 |
Break-through voltage: |
T = +20 °C: 404.3684737 V T = -25 °C: 368.5001346 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history