Show Hamamatsu Avalanche Photo Diode 2007022006
This is all the information about APD 2007022006. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2007022006 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2007022006/2320025883 |
| Unit: |
#2894 (barcode 1309032150) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E11 |
| Break-through voltage: |
407 V |
| Voltage for Gain 100 (T=+25°C): |
378.8 V |
| Dark current: |
13.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
235 |
| Position in Box: |
46 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10209 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
21. Aug 2019 |
| Sent for analysis after irradiation: |
15. Oct 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
09. Oct 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
12. Oct 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 379.1623566 V T = -25 °C: 344.6489463 V |
| Voltage for Gain 150: |
T = +20 °C: 386.9586055 V T = -25 °C: 351.8909035 V |
| Voltage for Gain 200: |
T = +20 °C: 391.3361658 V T = -25 °C: 355.9648493 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.613383083 V-1 T = -25 °C: 4.788501681 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.012422173 V-1 T = -25 °C: 9.714600288 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.88076783 V-1 T = -25 °C: 15.48162192 V-1 |
| Break-through voltage: |
T = +20 °C: 407.2606747 V T = -25 °C: 371.3968043 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history