Show Hamamatsu Avalanche Photo Diode 2007021999
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| Subdetector specification: |
|
| Serial: |
2007021999 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B10 |
| Break-through voltage: |
405 V |
| Voltage for Gain 100 (T=+25°C): |
376.8 V |
| Dark current: |
11.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
235 |
| Position in Box: |
40 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10209 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
21. Aug 2019 |
| Sent for analysis after irradiation: |
15. Oct 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
09. Oct 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
12. Oct 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 377.8035593 V T = -25 °C: 343.5907523 V |
| Voltage for Gain 150: |
T = +20 °C: 385.5498344 V T = -25 °C: 350.7542453 V |
| Voltage for Gain 200: |
T = +20 °C: 389.8819111 V T = -25 °C: 354.8415371 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.77568712 V-1 T = -25 °C: 5.365979982 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.438431314 V-1 T = -25 °C: 8.138656575 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.68897172 V-1 T = -25 °C: 16.4439042 V-1 |
| Break-through voltage: |
T = +20 °C: 405.2448179 V T = -25 °C: 369.3404054 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history