Show Hamamatsu Avalanche Photo Diode 2007021983
This is all the information about APD 2007021983. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2007021983 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2007021983/2402026053 |
| Unit: |
#3190 (barcode 1309031597) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G09 |
| Break-through voltage: |
404 V |
| Voltage for Gain 100 (T=+25°C): |
377.1 V |
| Dark current: |
15.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
235 |
| Position in Box: |
29 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10208 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
21. Aug 2019 |
| Sent for analysis after irradiation: |
15. Oct 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
09. Oct 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
12. Oct 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 377.1385579 V T = -25 °C: 342.9589439 V |
| Voltage for Gain 150: |
T = +20 °C: 384.8877287 V T = -25 °C: 350.1808816 V |
| Voltage for Gain 200: |
T = +20 °C: 389.2332951 V T = -25 °C: 354.2526004 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.615012556 V-1 T = -25 °C: 5.025455084 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.027874197 V-1 T = -25 °C: 9.405221155 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.98242896 V-1 T = -25 °C: 14.84378898 V-1 |
| Break-through voltage: |
T = +20 °C: 403.7200289 V T = -25 °C: 368.5051278 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
