Show Hamamatsu Avalanche Photo Diode 2004021753
This is all the information about APD 2004021753. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2004021753 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2302024260/2004021753 |
| Unit: |
#1669 (barcode 1309016761) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
H10 |
| Break-through voltage: |
406 V |
| Voltage for Gain 100 (T=+25°C): |
378.5 V |
| Dark current: |
11.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
244 |
| Position in Box: |
15 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10228 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
21. Aug 2019 |
| Sent for analysis after irradiation: |
15. Oct 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
09. Oct 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
12. Oct 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 379.9561506 V T = -25 °C: 343.837712 V |
| Voltage for Gain 150: |
T = +20 °C: 387.7087359 V T = -25 °C: 351.234561 V |
| Voltage for Gain 200: |
T = +20 °C: 392.0045573 V T = -25 °C: 355.4133123 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.659226158 V-1 T = -25 °C: 5.005041599 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.309991995 V-1 T = -25 °C: 9.221349071 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.6385646 V-1 T = -25 °C: 16.33813309 V-1 |
| Break-through voltage: |
T = +20 °C: 405.8084406 V T = -25 °C: 369.8641482 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
