Show Hamamatsu Avalanche Photo Diode 2004021742
This is all the information about APD 2004021742. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2004021742 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2004021742/2312025162 |
| Unit: |
#2886 (barcode 1309032075) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G11 |
| Break-through voltage: |
407 V |
| Voltage for Gain 100 (T=+25°C): |
379.2 V |
| Dark current: |
15 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
244 |
| Position in Box: |
5 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10228 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
21. Aug 2019 |
| Sent for analysis after irradiation: |
15. Oct 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
09. Oct 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
12. Oct 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 379.6563864 V T = -25 °C: 344.2900854 V |
| Voltage for Gain 150: |
T = +20 °C: 387.5851454 V T = -25 °C: 351.723939 V |
| Voltage for Gain 200: |
T = +20 °C: 391.9835524 V T = -25 °C: 355.9010262 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.65147683 V-1 T = -25 °C: 4.77761989 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.219304528 V-1 T = -25 °C: 9.615183255 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.32814097 V-1 T = -25 °C: 15.17128502 V-1 |
| Break-through voltage: |
T = +20 °C: 407.0431865 V T = -25 °C: 370.8190995 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history