Show Hamamatsu Avalanche Photo Diode 2002021570
This is all the information about APD 2002021570. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2002021570 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2002021570/2806031253 |
| Unit: |
#1132 (barcode 1309012190) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C11 |
| Break-through voltage: |
408 V |
| Voltage for Gain 100 (T=+25°C): |
379.7 V |
| Dark current: |
15.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
248 |
| Position in Box: |
29 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10285 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 379.9557566 V T = -25 °C: 344.3895062 V |
| Voltage for Gain 150: |
T = +20 °C: 387.812281 V T = -25 °C: 351.7594767 V |
| Voltage for Gain 200: |
T = +20 °C: 392.1842515 V T = -25 °C: 355.9074409 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.61620509 V-1 T = -25 °C: 4.793669033 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.123278598 V-1 T = -25 °C: 9.702400125 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.16327929 V-1 T = -25 °C: 15.35818284 V-1 |
| Break-through voltage: |
T = +20 °C: 407.795153 V T = -25 °C: 371.452222 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history