Show Hamamatsu Avalanche Photo Diode 1912021168
This is all the information about APD 1912021168. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1912021168 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G13 |
| Break-through voltage: |
404 V |
| Voltage for Gain 100 (T=+25°C): |
376.3 V |
| Dark current: |
27 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
238 |
| Position in Box: |
15 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10274 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 377.1422238 V T = -25 °C: 342.3782861 V |
| Voltage for Gain 150: |
T = +20 °C: 385.0192207 V T = -25 °C: 349.6515755 V |
| Voltage for Gain 200: |
T = +20 °C: 389.3971886 V T = -25 °C: 353.6897831 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.52082572 V-1 T = -25 °C: 4.925265909 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.910934261 V-1 T = -25 °C: 10.2086753 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.55135697 V-1 T = -25 °C: 16.57211202 V-1 |
| Break-through voltage: |
T = +20 °C: 400.7554335 V T = -25 °C: 367.3057819 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
